硅烷偶联剂对多孔硅的稳定化研究

为了将多孔硅应用于含能材料的制备,采用电化学双槽腐蚀法制备了平均孔径4.3 nm,厚度超过100μm的不龟裂多孔硅薄膜,利用硅烷偶联剂(KH550,KH560,KH570)对此多孔硅薄膜进行表面处理,采用红外光谱(FTIR)技术研究了三种硅烷偶联剂对多孔硅处理前后红外光谱的变化。结果显示,三种硅烷偶联剂均大大降低了多孔硅表面的Si—Hx键的数量,使不稳定的Si—H键转化成更加稳定的Si—OR键。其中KH550和KH570消除悬挂键的效果优于KH560。

Stability of Porous Silicon with Silane Coupling Agent

The uncracked porous silicon(PS) membrane which was fabricated by electrochemical etching technic was used to create nanoenergetic materials(nEMs) in experiments.The average diameter of pores was 4.3 nm,and the thickness of PS membrane was over 100 μm.The surface of PS membrane was modified by suitable coupling agents(KH550,KH560 and KH570).The infra-red spectrum(IR spectrum) of samples was tested by FTIR technology.The experimental results show that the coupling agents can remove the handing bonds on the surface of PS membrane by translating unstable bond of Si—H to much more stable chemical bond Si—OR.And KH550 and KH570 were more suitable to remove the handing bonds than KH560.