A complete analytical model of GaN MESFET for microwave frequency applications |
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Authors: | S Bose Adarsh A Kumar Simrata M Gupta R S Gupta |
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Affiliation: | Semiconductor Devices Research Laboratory, Department of Electronic Science, University of Delhi South Campus, Benito Juarez Road, New Delhi 110021, India |
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Abstract: | A simple physics-based analytical model for a non-self-aligned GaN MESFET suitable for microwave frequency applications is presented. The model includes the effect of parasitic source/drain resistances and the gate length modulation. The model is then extended to evaluate I–V and C–V characteristics, transconductance, cut-off frequency, transit time, RC time constant, optimum noise figure and maximum power density. The transconductance of about 21 mS/mm is obtained for GaN MESFET using the present theory in comparison to 23 mS/mm of the reported data. The cut-off frequency of more than 1 GHz, optimum noise figure of 6 dB and maximum output power density of more than 1 W/mm are predicted. |
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Keywords: | GaN MESFET Analytical modelling |
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