用几何靶溅射方法制备AlSb多晶薄膜

采用Al-Sb几何靶用直流磁控溅射方法沉积了AlSb薄膜(衬底温度为30%和200℃),然后在N_2气氛下,300～540℃,对沉积的薄膜进行退火.用X射线衍射分析了AlSb薄膜的结构,用X射线荧光光谱法测定了Al和Sb的原子比,用原子力显微镜观察了表面形貌.结果表明:几何靶可以很好地控制薄膜中Al和Sb原子的比例.制备的ALSb薄膜经过退火之后形成了面心立方结构的AlSb半导体化合物,平均晶粒大小约28rm.较高的退火温度有利于AlSb薄膜的晶粒生长.

PREPARATION OF AlSb POLYCRYSTALLINE THIN FILMS BY MAGNETRON SPUTTERING

The AlSb polycrystalline thin films were deposited by magnetron sputtering at 30℃ and 200℃, respectively, and then were annealed in the nitric atmosphere at the range of 300～540℃. The X-ray diffraction results showed that the annealed samples are AlSb polycrystalline films. The atomic ratio of Al to Sb was determined by X-ray fluorescence. The film surface was observed by atomic force microscope. The results suggested that the atomic ratio of Al to Sb can be well controlled by the target composition. The film transformed to AlSb polycrystalline with face centered cubic structure. The grain size was about 28nm. The higher annealing temperature is helpful to the grain growth of the film.