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A 3-terminal model for diffused and ion-implanted resistors |
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| Authors: | Booth R.V.H. McAndrew C.C. |
| Affiliation: | AT&T Bell Labs., Allentown, PA; |
| Abstract: | In this paper, we present a new, physically based 3-terminal model for diffused and ion-implanted resistors. The model accounts for the effects of geometry, temperature, and bias, and includes parasitic p-n junction diodes. The junction depletion capacitances are distributed to model high-frequency behavior accurately |
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