| 冷等离子体提纯硅的速率模型分析 |
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| 引用本文： | 尹盛,何笑明,冯信华,赵宁,陈丽,王敬义. 冷等离子体提纯硅的速率模型分析[J]. 半导体技术, 1999, 24(4): 32-35 |
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| 作者姓名： | 尹盛 何笑明 冯信华 赵宁 陈丽 王敬义 |
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| 作者单位： | 华中理工大学,电子科学与技术系,武汉430074 |
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| 摘 要： | 应用反应动力学方法建立基元反应速率方程并按工艺条件进行耦合，得出了以宏观工艺参数表达的提纯速率方程，这种方程便于计算，能指导工艺优化并容易为工程师应用，计算结果与实验数据能较好的吻合。
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| 关 键 词： | 冷等离子体 提纯速率 反应动力学 |
| 修稿时间： | 1998-09-20 |
Analyses on the Speed Model of Silicon Purity Treated by Cold Plasma |
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| Yin Sheng,He Xiaoming,Feng Xinhua,Zhao Ning,Chen Li,Wang Jingyi. Analyses on the Speed Model of Silicon Purity Treated by Cold Plasma[J]. Semiconductor Technology, 1999, 24(4): 32-35 |
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| Authors: | Yin Sheng He Xiaoming Feng Xinhua Zhao Ning Chen Li Wang Jingyi |
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| Abstract: | The reaction kinetics methods for constructing the speed equations of element reaction,which,then,coupled with the technlogy practice,the purity speed equation described by macroscopic parameters was obtained.This equation,which can be easily used by engineers,possesses the characters of simplifying the calculations,and leading to technology optimum.The calculating results of this equation are fitted into the experimental data well. |
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| Keywords: | Cold plasmaPurity speedReaction kinetics |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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