Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process |
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Authors: | Kim Jung Hyuk Moon So Ra Kim Yong Chen Zhi Gang Zou Jin Choi Duk Yong Joyce Hannah J Gao Qiang Tan H Hoe Jagadish Chennupati |
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Affiliation: | Department of Physics, Dong-A University, Hadan-2-dong, Sahagu, Busan 604-714, Korea. |
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Abstract: | We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated. |
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