| 四价金属元素锆（Zr）对氧化铁薄膜气敏特性的影响 |
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| 引用本文： | 柴常春 镇桂芹. 四价金属元素锆（Zr）对氧化铁薄膜气敏特性的影响[J]. 传感器与微系统, 1996, 0(2): 15-18 |
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| 作者姓名： | 柴常春 镇桂芹 |
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| 作者单位： | 西安电子科技大学，西安通信学院 |
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| 摘 要： | 对用常压化学气相淀积（ＡＰＣＶＤ）工艺制备的纯α－Ｆｅ２Ｏ３薄膜和掺锆（Ｚｒ）α－Ｆｅ２Ｏ３薄膜的气敏特性进行了研究。实验表明掺Ｚｒ是改善α－Ｆｅ２Ｏ３薄膜材料气敏特性的一种有效途径。
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| 关 键 词： | α－Fe2O3薄膜，掺锆，气敏特性 |
Effects of Quadrivalent Metal Zircon(Zr)-doping on the Gas-Sensing Properties of α-Fe_2O_3 Thin Films |
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| Chai Changchun,Peng Jun,Zhen Guiqin. Effects of Quadrivalent Metal Zircon(Zr)-doping on the Gas-Sensing Properties of α-Fe_2O_3 Thin Films[J]. Transducer and Microsystem Technology, 1996, 0(2): 15-18 |
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| Authors: | Chai Changchun Peng Jun Zhen Guiqin |
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| Affiliation: | Chai Changchun;Peng Jun;Zhen Guiqin (Xian Electronic University of Science and Technology) (Xi'an Communication Institute) |
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| Abstract: | The gas-sensing properties of pure α- Fe2O3 and Zr-doping α-Fe2O3 thin films prepared by atmospheric pressure chemical vapotur deposition (APCVD) are investigated. Experimental results indicated that Zr-doping is an effective method to improve the gas-sensing preperties of α-Fe2O3 thin films. |
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| Keywords: | ?Fe_2O_3 thin films Zr-doping Gas-sensing properties |
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