| 高亮度GaN基蓝色LED的研究进展 |
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| 引用本文： | 文尚胜. 高亮度GaN基蓝色LED的研究进展[J]. 量子电子学报, 2003, 20(1): 10-17 |
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| 作者姓名： | 文尚胜 |
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| 作者单位： | 华南理工大学光通信材料研究所,广州,510641 |
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| 基金项目： | 广东省2002年科技计划项目(2002B11604)资助课题 |
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| 摘 要： | 超高亮度GaN基蓝色LED的发展将会引起照明技术的一场革命，它是目前全球半导体领域研究和投资的特点。本文综合分析了GaN材料的特性及相应的材料生长和欧姆接触、刻蚀工艺等关键技术，并对GaN基蓝色LED器件的进一步改进及应用前景作了展望。
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| 关 键 词： | 高亮度 GaN 蓝色LED 欧姆接触 刻蚀 发光二极管 氮化镓 发展现状 外延生长 |
| 文章编号： | 1007-5461(2003)01-0010-08 |
| 收稿时间： | 2002-04-15 |
| 修稿时间： | 2002-04-15 |
Progress in the Study of High Brightness Blue GaN-based LEDs |
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| Wen Shangsheng. Progress in the Study of High Brightness Blue GaN-based LEDs[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 10-17 |
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| Authors: | Wen Shangsheng |
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| Abstract: | With further development of the high brightness blue GaN-based LEDs, it would bring about a revolution in the illumination field. GaN-based materials are the focus in the semiconductor research and investment at present. In this paper. An overview of the basic properties of the nitrides, material film growth and some key techniques, such as ohmic contact, etching of GaN-based LED epilayer recent progress and the future prospect of GaN-based blue HB-LED devices is also presented. |
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| Keywords: | GaN blue LED ohmic contact etching |
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