| i-GaAlAs/GaAs异质结绝缘栅场效应晶体管的静态特性研究 |
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| 引用本文： | 王德宁,顾聪,王渭源. i-GaAlAs/GaAs异质结绝缘栅场效应晶体管的静态特性研究[J]. 电子与信息学报, 1991, 13(3): 286-292 |
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| 作者姓名： | 王德宁 顾聪 王渭源 |
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| 作者单位： | 中国科学院上海冶金研究所 上海(王德宁，顾聪)，中国科学院上海冶金研究所 上海(王渭源) |
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| 摘 要： | 本文在改进型电荷控制模型基础上,引进GSW速度场方程,推导出异质结绝缘栅场效应晶体管(HIGFETs)的I_D-V_D-V_G,I_(DS)-V_G,G_m,和C_G等一系列静态特性方程。计算结果与文献实测值进行了比较,在V_G<2V,I_D
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| 关 键 词： | 异质结绝缘栅场效应晶体管 低场特性 结构参数 静态特性 |
| 收稿时间： | 1990-02-09 |
| 修稿时间： | 1990-10-12 |
ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE INSULATED GA TE FIELDEFFECT TRANSISTORS |
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| Wang Dening,Gu Cong,Wang Weiyuan. ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE INSULATED GA TE FIELDEFFECT TRANSISTORS[J]. Journal of Electronics & Information Technology, 1991, 13(3): 286-292 |
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| Authors: | Wang Dening Gu Cong Wang Weiyuan |
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| Affiliation: | Shanghai Institute of Metallurgy Academia Stnica Shanghai |
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| Abstract: | Based on improved charge conttrol model and combining GSW velocity-field equation, a series of analytical solutions for the static characteristics of HIGFETs such as TD-VD-VG,Gm and CG are derivel. The results of calculations are compared with experimen-tal data reported in references, within the rang of VG<2V, ID < TDS, they agree very well. It is pionted out that two-lengrh model must be considered in the high field region due to gre-ater leakage current between the gate and rhe drain. The effects of temperature on Vtk, and the effects of gate length and width, temperature, GaAlAs thickness, source resistance, GaAs mobility on Gm are discussed. Possible approaches for improving performances of HIGFETs are pointed out according to the above analyses. |
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| Keywords: | HIGFETs Low-field characteristics Structure parameters Static characteristics |
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