Radiative recombination in GaN nanocrystals at high intensities of optical excitation |
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| Authors: | A N Gruzintsev A N Red’kin C Barthou |
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| Affiliation: | (1) Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, 142432, Russia;(2) Université P. et M. Curie, Paris, France |
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| Abstract: | The spectra of spontaneous UV luminescence of GaN nanocrystals excited by optical pumping at power densities ranging from 50 W/cm2 to 50 MW/cm2 are studied. At room temperature, radiation peaks related to the emission of free excitons and recombination of electron-hole plasma are revealed. The spectral characteristics of the emission of the electron-hole plasma in GaN is studied in the wide temperature range of 77–550 K. |
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