| 真空环境下飞秒激光制备的微构造硅的吸收和退火特性 |
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| 引用本文： | 陈向前,彭滟,方丹,周云燕,刘姝祺,蔡斌,朱亦鸣.真空环境下飞秒激光制备的微构造硅的吸收和退火特性[J].红外与激光工程,2014,43(2):398-403. |
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| 作者姓名： | 陈向前 彭滟 方丹 周云燕 刘姝祺 蔡斌 朱亦鸣 |
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| 作者单位： | 1.教育部光学仪器与系统工程研究中心 上海市现代光学系统重点实验室上海理工大学 光电信息与计算机工程学院,上海 200093 |
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| 基金项目： | 上海市重点学科项目第三期工程(S30502);科技部国家重大基础研究项目973计划(2012CB934203);上海市教育委员会-上海市教育发展基金会“晨光计划”(12CG54);中国国家自然科学基金会(61007059,11104186,61138001,11174207);国家重大仪器专项(2011YQ150021,2012YQ150092,2012YQ140005);上海市基础研究重点项目(12510502300) |
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| 摘 要： | 在真空环境下利用飞秒激光制备的黑硅材料，其形貌与SF6气氛中制备的黑硅材料有着很大的区别。为了研究这种真空环境下制备的微构造硅的相关光学特性，通过改变入射脉冲能量研究其峰值变化以及吸收特性，发现当峰值达到一定高度时其对200~2 500 nm波段的光波有95%左右的吸收效率，这与SF6气氛中制备的微构造硅的吸收效率不相上下。最后对两种环境下制备的黑硅样品进行退火处理，发现真空环境下制备的黑硅材料比SF6气氛中制备的黑硅样品具有更好的耐退火性。这些结果对于利用真空环境下制备的微构造硅制作红外传感器具有重要意义。
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| 关 键 词： | 黑硅 微构造 吸收效率 退火 红外传感器 |
| 收稿时间： | 2013-06-12 |
Micro-structured silicon fabricated by femtosecond laser pulse for infrared sensor |
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| Affiliation: | 1.Engineering Research Center of Optical Instrument and System,Ministry of Education,Shanghai Key Lab of Modern Optical System,School of Optical-Electrical and computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China |
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| Abstract: | It is found that the black silicon fabricated by femtosecond laser in the vacuum is different from that fabricated in the gas atmosphere of SF6. To study the related optical properties of this micro-structured silicon fabricated in the vacuum, the changes of its peak height and absorptance were studied by changing the energy of laser pulse. It is found that the microstructures fabricated in the vacuum can also reach the absorptance of ~95% in the spectral range of 200-2 500 nm as that fabricated in the gas atmosphere of SF6. Finally, by annealing the black silicon fabricated in two different environments, the black silicon fabricated in the vacuum has better annealing resistance. These results are very significative for the fabrication of infrared sensor. |
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