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Copper-related defects in silicon
Affiliation:1. Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, ON, Canada;2. Center for Nanointegration Duisburg Essen (CENIDE), University of Duisburg-Essen, Duisburg, Germany;3. Institute for Combustion and Gas Dynamics (IVG), University of Duisburg-Essen, Duisburg, Germany;1. School of Metallurgy and Chemical Engineering, Jiangxi University of Science and Technology, Ganzhou, 341000, PR China;2. College of Chemistry and Chemical Engineering, Gannan Normal University, Ganzhou, 341000, PR China;1. Center for Physical Sciences and Technology, Saulėtekio al.3, LT-10257 Vilnius, Lithuania;2. Institute of High Pressure Physics UNIPRESS, Sokołowska 29/37, 01-142 Warsaw, Poland;3. TopGaN Ltd, Sokołowska 29/37, 01-142 Warsaw, Poland;1. Institute of Modern Optics, Nankai University, Tianjin 300071, China;2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;1. Instituut voor Sterrenkunde, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;2. INAF – Osservatorio Astronomico d’Abruzzo, Via mentore maggini s.n.c., I-64100 Teramo, Italy;3. INFN – Sezione di Perugia, via A. Pascoli, I-06123 Perugia, Italy;4. Departament de Ciència de Materials i Química Física & Institut de Química Teórica i Computacional (IQTCUB), Universitat de Barcelona, E-08028 Barcelona, Spain;5. Institució Catalana de Recerca i Estudis Avançats (ICREA), E-08010 Barcelona, Spain
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