Performance of 1-10-GHz traveling wave amplifiers in 0.18-/spl mu/m CMOS

The authors present two four-stage traveling-wave amplifiers (TWA) fabricated in a 0.18-/spl mu/m CMOS process. A TWA with an internal drain bias network achieved a gain of 5 dB out to 10 GHz, and another TWA without an on-chip bias network achieved a gain of 8 dB out to 10 GHz. These are the highest frequency CMOS TWAs known to the authors.