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Influence of charge trapping on oxide scaling down
Authors:G Ghidini  M Alessandri  C Clementi  F Pellizzer
Affiliation:aNon Volatile Memory Process Development, Central R&D, SGS-THOMSON Microelectronics, via Olivetti 2, 20041 Agrate Brianza, Italy
Abstract:The aim of this work is the characterization, in terms of trapped charge and charge to breakdown, of the quality of an oxide with reduced thickness. A comparison between two evaluation methods, the widely used exponentially ramped current stress (ERCS) and the constant current stress (CCS), is established obtaining contradictory results. A measurement of the charge trapped in the oxide bulk is performed by sensing the modification of the Fowler–Nordheim barrier under constant current stress. Using this technique it is possible to correlate the charge trapping characteristics with the charge to breakdown and to explain the inconsistencies.
Keywords:
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