Extraction method for source series resistance and transverse field mobility reduction coefficient using the MOSFET saturation region |
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| Authors: | A.M. Ionescu A. Chovet A.E. Popescu A. Rusu D. Steriu |
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| Affiliation: | aLPCS (UMR 5531 CNRS), Institut National Polytechnique de Grenoble, Grenoble, France;bEngineering Department, University of Cambridge, Cambridge, UK;cPolytechnic University of Bucharest, Faculty of Electronics, Bucharest, Romania |
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| Abstract: | A new extraction method for source series resistance and mobility reduction coefficient with transverse field, based on the MOSFET transconductance modeling in the saturation region, is reported. The simple associated transconductance model also appears to be extremely useful for optimal parameter extraction. The proposed method is validated on partially depleted SIMOX MOSFETs. |
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