n/p ultra-shallow junction formation with plasma immersion ion implantation |
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| Authors: | B.L Yang Erin C Jones Nathan W. Cheung Jiqun Shao H Wong Y.C Cheng |
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| Affiliation: | aDepartment of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA;bEaton Corporation, Semiconductor Equipment Operation, Beverly, MA 01915, USA;cDepartment of Electronic Engineering, City University of Hong Kong, Hong Kong;dUniversity of Hong Kong, Hong Kong |
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| Abstract: | n+/p ultra-shallow junctions formed by PH3 plasma immersion ion implantation (PIII) have been studied and diodes with good electrical characteristics have been obtained. The influence of annealing conditions and carrier gas on junction depth and sheet resistance have been studied. It is found that a higher content of H and/or He in silicon can slow down the diffusion of phosphorus and the activation ability of implanted dopant ions in silicon; a shallower junction can been obtained with He rather than H2 as the carrier gas; and the influence of annealing at 850°C for 20 s on sheet resistance is opposite to that of annealing at 900°C for 6 s on sheet resistance. In addition, mechanisms of unusual electrical characteristics for some diodes are discussed and analyzed in this paper. |
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