Structural properties and electrical behaviour of thin silicon oxynitride layers |
| |
Authors: | R Beyer H Burghardt R Reich E Thomas T Gessner DRT Zahn |
| |
Affiliation: | Institut für Physik, Technische Universität Chemnitz, D-09107 Chemnitz, Germanyand;Institut für Halbleiter- und Mikrosystemtechnik, Technische Universität Chemnitz, D-09107 Chemnitz, Germany |
| |
Abstract: | Thin SiO2 and SiOxNy layers were grown on silicon using Rapid Thermal Processing (RTP) in either O2 or N2O ambient. Subsequent annealing or nitridation was performed in order to improve the electrical stability. The composition of the films, in particular the incorporation of nitrogen and hydrogen, has been studied. We obtained the distribution of states at the Si/insulator interface through the evaluation of CV measurements and investigated the charge trapping in the layers analysing the voltage–time behaviour during Fowler–Nordheim constant current injection. Furthermore, assuming a trap assisted tunneling mechanism, the influence of near interface trap states on the current voltage characteristic was used to derive an effective insulator state distribution. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|