Designing power supply clamps for electrostatic discharge protection of integrated circuits |
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Authors: | T.J. Maloney |
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Affiliation: | aIntel Corporation, RN4-40, 2200 Mission College Boulevard, Santa Clara, CA 95052, USA |
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Abstract: | Power supply electrostatic discharge (ESD) clamping is needed to protect the IC power supply as well as to provide convenient discharge paths for ESD currents, and thereby simplify the total design problem. A variety of methods are reviewed and explored, notably those employing diodes or field effect transistor (FETs) built in bulk complementary metal-oxide semiconductor (CMOS) technology and avoiding avalanche behavior. Power clamping can occur across comparable power supplies or between a power supply and ground; there are diode and FET methods for each. Designs extend to clamping for mixed voltage supplies on a single chip, including power supplies above the gate oxide tolerance. New designs and results for power clamps based on PMOS FETs are presented for the first time. |
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