A biased percolation model for the analysis of electronic-device degradation |
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| Authors: | Z Gingl C Pennetta LB Kiss L Reggiani |
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| Affiliation: | aJATE University, Department of Experimental Physics, Dom ter 9, Szeged, H-6720, Hungary;bDipartimento di Fisica, Universitàdi Lecce, Via Arnesano, 73100 Lecce, Italy; Istituto Nazionale di Fisica della Materia (INFM);cUppsala University, Material Science Department, Angstrom Laboratory, Box 534, S-75121 Uppsala, Sweden;dDipartimento Scienza Materiali, Universitàdi Lecce, Via Arnesano, 73100 Lecce, Italy; Istituto Nazionale di Fisica della Materia, (INFM) Italy |
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| Abstract: | The biased percolation model is proposed for investigating device degradation and failure associated with the generation of defects due to local Joule heating. The degradation processes of a thin conducting or semiconducting film is monitored by a set of relevant indicators, such as: the evolution of damage pattern, the current distribution, the film resistance and its fluctuations, the defect concentration, the film lifetime, etc. The conductor-insulator (CI) and conductor-superconductor (CS) like degradation processes are considered. The results can be used to propose non-destructive indicators to test the reliability of samples and to interpret the corresponding experiments. |
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