| ICP等离子体刻蚀系统射频偏压的实验研究 |
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| 引用本文： | 张庆钊,谢常青,刘明,李兵,朱效立,陈宝钦.ICP等离子体刻蚀系统射频偏压的实验研究[J].半导体学报,2008,29(5):980-983. |
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| 作者姓名： | 张庆钊 谢常青 刘明 李兵 朱效立 陈宝钦 |
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| 作者单位： | 中国科学院微电子研究所纳米加工与新器件集成技术实验室,北京100029 |
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| 基金项目： | 国家高技术研究发展计划(863计划)
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国家重点基础研究发展计划(973计划) |
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| 摘 要： | 对于上下电极双射频源的电感耦合(ICP)等离子体刻蚀设备的关键工艺参数--下电极射频偏压的变化特性进行了实验与物理定性分析.实验以氧气作为反应气体,采用可满足300mm硅晶片刻蚀的ICP刻蚀设备的射频系统进行实验数据测定.结果表明,下电极射频偏压与其他工艺参数在可适用的工艺窗口中(改变上下电极功率和气体压力)不再是平常认为的简单的比例关系,而是随着条件的改变,对应的趋势比例关系会发生转折性变化,这种变化在高上电极射频、低下电极射频功率和低气压的条件下很容易发生.
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| 关 键 词： | 等离子体 射频偏压 ICP 干法刻蚀 |
| 文章编号： | 0253-4177(2008)05-0980-04 |
| 收稿时间： | 10/8/2007 8:25:31 PM |
| 修稿时间： | 2007年10月8日 |
RF Bias Voltage in ICP Etch Systems |
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| Zhang Qingzhao,Xie Changqing,Liu Ming,Li Bing,Zhu Xiaoli and Chen Baoqin.RF Bias Voltage in ICP Etch Systems[J].Chinese Journal of Semiconductors,2008,29(5):980-983. |
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| Authors: | Zhang Qingzhao Xie Changqing Liu Ming Li Bing Zhu Xiaoli and Chen Baoqin |
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| Affiliation: | Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Laboratory of Nanofabrication and Novel Devices Integration,Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | In order to understand the relationship between RF bias voltage on bottom electrode and other process parameters,we designed an experiment.The results indicated that the relationship varies depending on the other parameters' variation.The upper electrode RF power,the bottom electrode RF power,and gas pressure all distinctly affect this relationship. |
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| Keywords: | plasma RF bias voltage ICP dry etch |
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