1.5-V CMOS exponential current generator |
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Authors: | Vassileios Kalenteridis Spyridon Vlassis Stylianos Siskos |
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Affiliation: | 2. Electronics Laboratory, Department of Physics, Aristotle University of Thessaloniki, 54124, Thessaloniki, Greece 1. Electronics Laboratory, Physics Department, University of Patras, 26500, Patras, Greece
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Abstract: | A new low-voltage CMOS exponential current generator is proposed in this work. MOS transistors in weak-inversion region and a master?Cslave technique for the temperature compensation were used. The circuit was fabricated with standard CMOS 0.35???m process using a single supply voltage of 1.5?V. Experimental results validate the theoretical analysis and verify the effectiveness of the proposed structure. A 40?dB range linearly in dB controlled output current with less than 1.5?dB linearity error was achieved. The structure features ±1 and ±3?dB deviations for ±10% supply voltage and 80°C temperature variations, respectively. |
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