| Dark output characteristic of γ-ray irradiated CMOS digital image sensors |
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| 引用本文： | MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology,Tsinghua University,Beijing 100084,China. Dark output characteristic of γ-ray irradiated CMOS digital image sensors[J]. 稀有金属(英文版), 2002, 21(1): 79-84 |
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| 作者姓名： | MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology Tsinghua University Beijing 100084 China |
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| 作者单位： | MENG Xiangti and KANG A iguo Institute of Nuclear Energy Technology，Tsinghua University，Beijing 100084，China |
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| 基金项目： | the National Natural Science Foundation of China (No.10075029). |
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| 摘 要： | l IntroductionThe CMOS (complementary metal oxidesemiconductor) image sensor is a new solid im-age sensor, which has more benefits than thecharge coupled devices (CCD) sensors, e-g. hig-her integration, lower power consumption, su-perior image quality, smaller volume, more cost-effective, and easier to be produced using thestandard CMOS device fabrication process. ltcan be wideIy used in many fields and has amore extensive market foreground [ l ].The CMOS image sensor was invented by Jet…
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| 关 键 词： | CMOS数字图象传感器 γ射线照射 硅 图象质量 CCD |
Dark output characteristic of γ-ray irradiated CMOS digital imagesensors |
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| MENG Xiangti,KANG Aiguo. Dark output characteristic of γ-ray irradiated CMOS digital imagesensors[J]. Rare Metals, 2002, 21(1): 79-84 |
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| Authors: | MENG Xiangti KANG Aiguo |
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| Abstract: | The quality of dark output images from the CMOS (complementary metal oxide semiconductor) black and white (B&W) digital image sensors captured before and after y-ray irradiation was studied. The characteristic parameters of the dark output images captured at different radiation dose, e.g. average brightness and its non-uniformity of dark output images, were analyzed by our test software. The primary explanation for the change of the parameters with the radiation dose was given. |
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| Keywords: | CMOS digital image sensor gamma radiation dark output characteristic Si |
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