| 热氧化生长的SiO2钝化膜对晶体硅太阳电池性能的影响 |
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| 引用本文： | 叶发敏,冯仕猛,郭爱娟,熊胜虎. 热氧化生长的SiO2钝化膜对晶体硅太阳电池性能的影响[J]. 太阳能学报, 2012, 33(2): 270-272 |
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| 作者姓名： | 叶发敏 冯仕猛 郭爱娟 熊胜虎 |
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| 作者单位： | 1. 上海交通大学物理系,上海,200240
2. 上海交大泰阳绿色能源有限公司,上海,200240 |
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| 摘 要： | 使用干氧热氧化的方法在晶体硅太阳电池表面生长SiO2钝化膜。结果表明:在780℃下生长的氧化薄膜钝化效果较好,实验检测少子寿命提高了8.3μs,以此为基础制备的太阳电池转换效率达到17.38%。实验还对氮气气氛下的氧化进行研究,发现当氮气流量为10L/min时,能强化薄膜的钝化效果,少子寿命可提高9.4μs。
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| 关 键 词： | 晶体硅 太阳电池 钝化 干氧氧化 表面复合 |
SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS |
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| Ye Famin , Feng Shimeng , Guo Aijuan , Xiong Shenghu. SURFACE PASSIVATION OF THERMAL OXIDATION OF SiO2 FILM ON INFLUENCE TO PERFORMANCE OF CRYSTALLINE SILICON SOLAR CELLS[J]. Acta Energiae Solaris Sinica, 2012, 33(2): 270-272 |
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| Authors: | Ye Famin Feng Shimeng Guo Aijuan Xiong Shenghu |
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| Affiliation: | 1.Dept.of Physics,Shanghai Jiao Tong University,Shanghai 200240,China; 2.Shanghai Topsola Green Energy Co.,Ltd.,Shanghai 200240,China) |
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| Abstract: | The article focus on the research about the surface passivation by means of dry-oxygen thermal oxidation to grow a SiO2 film on the surface of crystalline silicon cells.The experimental result shows that,at the 780℃ of the oxidation temperature,the effect of passivation is best,which can raise the minority carrier lifetime as many as 8.3μs,and the efficiency of solar cells is up to 17.38%.Meanwhile,the oxidation at the atmosphere of nitrogen is studied.The result shows that,when the nitrogen flow is 10L/min,the effect of passivation is improved,which can raise the minority carrier lifetime as many as 9.4μs. |
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| Keywords: | crystalline silicon solar cells passivation dry-oxygen oxidation surface recombination |
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