Low-temperature fabrication of amorphous BaTiO3thin-film bypass capacitors |
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| Authors: | Liu W.T. Cochrane S. Lakshmikumar S.T. Knorr D.B. Rymaszewski E.J. Borrego J.M. Lu T.-M. |
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| Affiliation: | Rensselaer Polytech. Inst., Troy, NY; |
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| Abstract: | Amorphous BaTiO3 thin-film capacitors suitable for integration into a multichip module packaging process were fabricated. The multilayer capacitor structure consisted of an adhesion layer (TiO xNy or Ti), a bottom electrode (Cu), a dielectric (amorphous BaTiO3), and a top electrode (Cu). A 3000-Å amorphous BaTiO3 film was deposited onto the electrode by the reactive partially ionized beam (RPIB) technique at near room temperature. After a 300°C postdeposition anneal, the capacitors had the following properties: εr=17-18 and tanδ<0.01 up to 600 MHz, Jleak=0.06-0.5 μA/cm2 at 0.5 MV/cm, and breakdown field Emax=3.3 MV/cm |
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