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Effect of Mn doping on the dielectric properties of BaZr0.2Ti0.8O3 ceramics
Authors:Wei Cai  Chunlin Fu  Jiacheng Gao  Xiaoling Deng
Affiliation:(1) School of Metallurgical and Materials Engineering, Chongqing University of Science and Technology, Huxi Town, 401331 Shapingba, Chongqing, China;(2) School of Materials Science and Engineering, Chongqing University, 400044 Chongqing, China
Abstract:Pure and Mn-doped BaZr0.2Ti0.8O3 ceramics are prepared via the conventional solid state reaction method. The microstructures, dielectric properties, and diffuse transition of Mn-doped BaZr0.2Ti0.8O3 ceramics have been investigated. The results indicate that manganese ions enter the unit cell maintaining the perovskite structure of solid solution. The addition of manganese leads to the decrease of the Curie temperature. The dielectric loss of the Mn-doped BZT ceramics is lower than that of pure BZT ceramics, and decreases as Mn content increases. The diffuseness of the phase transition of Mn-doped BZT ceramics decreases with the increase of Mn content. There is no obvious frequency dispersion around the dielectric constant peaks for Mn-doped BZT ceramics. The coercive electric field and the remanent polarization decreases as Mn content increases.
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