Structure and electrical properties of polycrystalline SiGe films grown by molecular beam deposition |
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Authors: | I B Chistokhin A K Gutakovski? A S Deryabin |
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Affiliation: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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Abstract: | The structural and electrical properties of polycrystalline Si0.5Ge0.5 films 150 nm thick grown by molecular beam deposition at temperatures of 200–550°C on silicon substrates coated with amorphous layers of silicon oxynitride were studied. It is shown that the films consist of a mixture of amorphous and polycrystalline phases. The amorphous phase fraction decreases from ~50% in films deposited at 200°C to zero in films grown at 550°C. Subsequent 1-h annealing at a temperature of 550°C results in complete solid-phase crystallization of all films. The electron transport of charge carriers in polycrystalline films occurs by the thermally activated mechanism associated with the energy barrier of ~0.2 eV at grain boundaries. Barrier lowering upon additional annealing of SiGe films correlates with an increase in the average grain size. |
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