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Direct capacitance measurements of small geometry MOS transistors |
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| Authors: | P Vitanov T Dimitrova I Eisele |
| Affiliation: | Institute of Microelectronics, Sofia, Bulgaria Fakultät für Elektrotechnik, Universität der Bundeswehr, München D-8014, Neubiberg, Germany |
| Abstract: | Methods for measuring the intrinsic capacitances of small geometry MOS transistors are described. The influence of short- and narrow-channel effects on the capacitance characteristics of MOS transistors is evaluated. The results are compared with long-channel devices. It is shown that the presented capacitance methods can be used to study the physics of short-channel transistors. |
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