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Crystal growth and characterization of In23PS3
Authors:S. Soled  A. Wold
Affiliation:Department of Chemistry and Division of Engineering, Brown University Providence, Rhode Island 02912 USA
Abstract:Crystals of In23PS3 were grown by chemical vapor transport of the elements from a charge zone maintained at 630°C. and a growth zone at 560°C. The crystals were characterized by chemical, x-ray, and densitometric techniques. In23PS3 is structurally related to the MIIPS3 thiophosphides. The compound is an insulator and has an optical absorption edge of 3.1(1) e.V.
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