低驱动电压两端固定"桥"式RF MEMS开关的研制 |
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引用本文: | 孙建海,崔大付,张璐璐.低驱动电压两端固定"桥"式RF MEMS开关的研制[J].仪表技术与传感器,2009(10). |
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作者姓名: | 孙建海 崔大付 张璐璐 |
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作者单位: | 中国科学院电子学研究所传感技术国家重点实验室,北京,100190 |
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摘 要: | 文中介绍了一低驱动电压接触式RF-MEMS开关,开关采取了两端固定的"桥式"结构,在桥与支撑点间采用折叠弯曲的铰链结构,而且紧靠中央信号线的旁边各有一个较大面积的电极,这些措施降低了开关的驱动电压.整个工艺采用表面微加工工艺.由实验测试可知:开关驱动电压11 V左右,与ANSYS模拟的值12 V基本一致,开关的S参数,在的范围内,插入损耗要小于-1 dB,在频段(≤5 GHz),开关的隔离度要优于-30 dB,在频段5~10 GHz,隔离度也要高于-20 dB.
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关 键 词: | RF-MEMS开关 驱动电压 隔离度 |
Study on Low-voltage DC-Contact RF MEMS Switches |
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Abstract: | A low-voltage DC-contact RF MEMS switches was presented. The design was based on the standard fixed-fixed beam structure.The low-voltage design was achieved using narrow meander support structures,and two large pads on both sides of the switch were used as the actuation electrodes. RF MEMS switches were fabricated via a surface micromachining process. The switch has an actuation voltage of 11 V,which was close to the simulated value of 12 V. The insertion loss is less than - 1 dB from DC up to 10 GHz,the isolation is higher than -30 dB from DC up to 5 GHz,and higher than -20 dB from 5 GHz up to 10 GHz. |
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Keywords: | DC-contact RF-MEMS switches actuation voltage isolation insertion loss |
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