Substrate current based avalanche multiplication measurement in 120 GHz SiGe HBTs |
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| Authors: | Jun Pan Guofu Niu Jin Tang Yun Shi Joseph A.J. Harame D.L. |
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| Affiliation: | Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA; |
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| Abstract: | A new substrate current-based technique for measuring the avalanche multiplication factor (M - 1) in high-speed SiGe heterojunction bipolar transistors (HBTs) is proposed. The technique enables M - 1 measurement at high operating current densities required for high-speed operation, where conventional techniques fail because of self-heating. Using the proposed technique, M - 1 was measured up to 10 mA//spl mu/m/sup 2/ on SiGe HBTs featuring 120 GHz peak f/sub T/ which occurs at J/sub C/ about 7 mA//spl mu/m/sup 2/. Implications for circuit applications are also discussed. |
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