| 阱接触面积对PMOS单粒子瞬态脉冲宽度的影响 |
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| 引用本文： | 刘蓉容,池雅庆,何益百,窦强.阱接触面积对PMOS单粒子瞬态脉冲宽度的影响[J].计算机工程与科学,2015,37(6):1053-1057. |
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| 作者姓名： | 刘蓉容 池雅庆 何益百 窦强 |
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| 作者单位： | 1. 国防科学技术大学计算机学院,湖南长沙,410073
2. 国防科学技术大学计算机学院,湖南长沙410073;电子元器件可靠性物理及其应用技术重点实验室,广东广州510610 |
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| 基金项目： | 国家重点实验室开放基金 |
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| 摘 要： | 使用TCAD模拟工具分析了纳米工艺下阱接触面积对PMOS SET脉冲宽度的影响。结果表明,纳米工艺下,当存在脉冲窄化效应时,增加阱接触面积会导致SET脉冲变宽,这与传统的通过增加阱接触面积可抑制SET脉冲的观点正好相反。同时,还分析了不同入射粒子LET值以及晶体管间距条件对该现象的作用趋势。
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| 关 键 词： | 阱接触面积 单粒子瞬态 PMOS 脉冲宽度 |
| 收稿时间： | 2014-04-30 |
| 修稿时间： | 2015-06-25 |
Impact of well contact area on the PMOS SET pulse width |
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| LIU Rong-rong,CHI Ya-qing,HE Yi-bai,DOU Qiang.Impact of well contact area on the PMOS SET pulse width[J].Computer Engineering & Science,2015,37(6):1053-1057. |
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| Authors: | LIU Rong-rong CHI Ya-qing HE Yi-bai DOU Qiang |
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| Affiliation: | （1.College of Computer,National University of Defense Technology,Changsha 410073;
2.National Key Laboratory of Science and Technology on Reliability Physics
and Application Technology of Electrical Component,Guangzhou 510610,China） |
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| Abstract: | We analyze the impact of well contact area on the PMOS SET pulse width in nano technology using TCAD simulations. Simulation results show that in nano technology, increasing the well contact area can broaden the SET pulse width due to the pulse quenching effect, which contradicts the traditional view that increasing the well contact area can effectively mitigate the SET pulse. Meanwhile, the tendency of this phenomenon under different incident particle LET values and transistor gaps is also analyzed. |
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| Keywords: | well contact area single event transient PMOS pulse width |
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