Elementary scattering theory of the Si MOSFET |
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Authors: | Lundstrom M. |
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Affiliation: | Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN; |
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Abstract: | A simple one-flux scattering theory of the silicon MOSFET is introduced. Current-voltage (I-V) characteristics are expressed in terms of scattering parameters rather than a mobility. For long-channel transistors, the results reduce to conventional drift-diffusion theory, but they also apply to devices in which the channel length is comparable to or even shorter than the mean-free-path. The results indicate that for very short channels the transconductance is limited by carrier injection from the source. The theory also indicates that evaluation of the drain current in short-channel MOSFETs is a near-equilibrium transport problem, even though the channel electric field is large in magnitude and varies rapidly in space |
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