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Effect of hydrogen radical on growth of μc-Si in hetero-structured SiCx alloy films |
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| Authors: | Takashi Itoh Kazunori Fukunaga Takao Fujiwara Shuichi Nonomura |
| Affiliation: | a Department of Electrical Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan b Environmental and Renewable Energy Systems, Graduate School of Engineering, Gifu University, 1-1 Yanagido, Gifu 501-1193, Japan |
| Abstract: | The changes of the crystallinity of μc-Si phase are studied in samples deposited with hydrogen dilution ratio, H2/SiH4, from 9.0 to 19.0 by hot-wire CVD (Cat-CVD). In the samples deposited at filament temperature, Tf, of 1850 °C, the crystalline fraction and the crystallite size of μc-Si phase increased with increasing the H2/SiH4. The carbon content, C/(Si+C), was almost constant. In the XRD patterns, the intensity of Si(1 1 1) peak decreased and that of Si(2 2 0) peak increased with increasing the H2/SiH4. In the samples deposited at Tf of 2100 °C with H2/SiH4 over 11.4, the μc-Si phase was not formed and the C/(Si+C) increased. The growth mechanism of μc-Si in hetero-structured SiCx alloy films is discussed. |
| Keywords: | Hetero-structured SiCx alloy Crystallinity of μc-Si Hydrogen radical Etching |
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