| Al/Ni薄膜自蔓延反应连接温度场模拟及分析 |
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| 引用本文： | 王百慧,夏卫生,吴丰顺,等. Al/Ni薄膜自蔓延反应连接温度场模拟及分析[J]. 电子工艺技术, 2014, 0(1): 6-10 |
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| 作者姓名： | 王百慧 夏卫生 吴丰顺 等 |
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| 作者单位： | [1]华中科技大学,湖北武汉430074 [2]顺达电脑厂有限公司,广东顺德528308 |
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| 基金项目： | 科技部2011年中欧科技合作项目（项目编号：1110）;欧盟第7框架项目（项目编号：PIRSES-GA-2010-269113）. |
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| 摘 要： | 自蔓延反应能在极短时间内产生足够集中的热量熔化钎料实现材料的连接,具有连接效率高、对连接母材热影响小等特点,从而在材料连接和电子封装领域有着广泛的应用前景。针对Cu/Cu和Cu/Si两种互连结构,建立Ai/Ni薄膜自蔓延反应的连接温度场有限元模型,分析不同钎料厚度、预热条件等参数以及不同连接材料对自蔓延反应连接温度场的影响规律。
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| 关 键 词： | 自蔓延反应 连接过程 温度场 有限元模型 Al/Ni薄膜 |
Simulation and Analysis of Temperature Field of Self-propagating Reaction Connection Based on Al/Ni Film |
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| Affiliation: | WANG Bai-hui1, XIA Wei-sheng1, WU Feng-shun1, ZHUWen-bo1, WANG Paul2, HOU Eric2 ( 1. Huazhong University of Science and Technology Materials Science and Engineering, Wuhan 430074, China; 2. Mitac Computer (Shunde) Ltd., Shunde 528308, China ) |
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| Abstract: | Self-propagating reaction can produce concentrated heat in a very short period of time, which can melt solder and then achieve material connection. This heat source has high efficiency of connection and little heat effect on base material. Thus, self-propagating reaction connection method has widespread applications foreground for electronic packaging and material connection. Aim at Cu/Cu and Cu/Si interconnection structure, build finite element model of connection temperature field based on AI/Ni self-propagating reaction, and analyze influence rules of parameters such as different solder thickness or different preheating temperature and different connection material on temperature field of self-propagating reaction connection. |
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| Keywords: | Self-propagating reaction Connection process Temperature field Finite element model Al/Ni film |
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