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Experimental validation of crosstalk simulations for on-chip interconnects using S-parameters
Authors:Kobrinsky   M.J. Chakravarty   S. Jiao   D. Harmes   M.C. List   S. Mazumder   M.
Affiliation:Components Res. Dept., Intel Corp., Hillsboro, OR;
Abstract:Since the design of advanced microprocessors is based on simulation tools, accurate assessments of the amount of crosstalk noise are of paramount importance to avoid logic failures and less-than-optimal designs. With increasing clock frequencies, inductive effects become more important, and the validity of assumptions commonly used in simulation tools and approaches is unclear. We compared accurate experimental S-parameters with results derived from both magneto-quasi-static and full-wave simulation tools for simple crosstalk structures with various capacitive and inductive couplings, in the presence of parallel and orthogonal conductors. Our validation approach made possible the identification of the strengths and weaknesses of both tools as a function of frequency, which provides useful guidance to designers who have to balance the tradeoffs between accuracy and computation expenses for a large variety of cases
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