Influence of annealing on the phase composition,transmission and resistivity of SnOx thin films |
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| Authors: | G Beensh-Marchwicka L Kròl-Stȩpniewska A Misiuk |
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| Affiliation: | Institute of Electron Technology of Wroc?aw, Technical University, Janiszewskiego 11-17, 50-372 Wroc?aw, Poland |
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| Abstract: | Undoped and antimony-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were annealed in air, nitrogen and a vacuum in the temperature range 570–750 K. The influence of thermal annealing on the structural properties, electrical resistance and optical transmittance is described. |
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