Electrical and thermoelectric properties of Sb2S3 thin films prepared by the dip-dry method

The electrical conductivity, thermoelectric power and spectral response of the photoconductivity of Sb₂S₃ films prepared by the dip-dry method were investigated. The activation energy is found to decrease with an increase in the thickness of the films. Both the thermoelectric power and the conductivity are observed to increase with an increase in the thickness. The results were interpreted in terms of the models of Seto and Kwok proposed for polycrystalline silicon films and inhomogeneous semiconductors respectively.