70-90 GHz balanced resistive PHFET mixer MMIC |
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| Authors: | Schaper U. Schafer A. Werthof A. Siweris H.J. Tischer H. Klapproth L. Bock G. Kellner W. |
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| Affiliation: | Corp. Technol., Siemens AG, Munich; |
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| Abstract: | A balanced resistive GaAs high electron mobility transistor mixer monolithic microwave integrated circuit has been designed and fabricated in a production oriented technology. The design is based on a specialised large signal model for linear transistor operation. The conversion loss was 8-10 dB for 70-90 GHz and the noise figure at 100 kHz was 31 dB, which is 11 dB lower than that obtained with diode mixers |
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