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并联有源电力滤波器保护的关键技术研究
引用本文:陈宇,程汉湘,王兵,周淑敏. 并联有源电力滤波器保护的关键技术研究[J]. 物联网技术, 2012, 0(9): 55-57
作者姓名:陈宇  程汉湘  王兵  周淑敏
作者单位:广东工业大学自动化学院
摘    要:针对并联有源电力滤波器在运行过程中会多次出现IGBT爆炸的问题,经过实验分析了IGBT的过电压形成过程。鉴于IGBT的关断时间极短,连接导线上寄生的微小杂散电感在高频开关的作用下会产生尖峰过电压,并与原有电压叠加,从而对IGBT的安全构成威胁[1]。文中为设计的100kV·A并联有源电力滤波器所选择的IGBT模块设计了一种缓冲电路,从而解决了IGBT模块爆炸的问题,保证了并联有源电力滤波器的安全运行。

关 键 词:SAPF  IGBT  过电压  寄生电感

Research on key technologies of protection system for shunt active power filter
CHEN Yu, CHENG Han-xiang, WANG Bing, ZHOU Shu-min. Research on key technologies of protection system for shunt active power filter[J]. Internet of things technologies, 2012, 0(9): 55-57
Authors:CHEN Yu   CHENG Han-xiang   WANG Bing   ZHOU Shu-min
Affiliation:(School of Automation, Guangdong University of Technology, Guangzhou 510006, China)
Abstract:During the operation of shunt active power filter, the explosion of IGBT occurs several times. Through experiments the generation of IGBT over-voltage is analyzed. Because the shutdown time of IGBT is very short, the tiny stray inductance on the connecting wire produces a spike over-voltage under the effect of high frequency. The spike over-voltage affects the security of IGBT when it is superimposed on the original voltage. In this paper, the buffer circuit for an appropriate IGBT module used in the 100kVA shunt active power filter is designed, which solves the explosion problems and protects the safe operation of shunt active power filter.
Keywords:SAPF  IGBT  over-voltage  parasitic inductance
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