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移动加热器法晶体生长工艺的研究进展
引用本文:高笑,刘俊成,翟慎秋. 移动加热器法晶体生长工艺的研究进展[J]. 材料科学与工艺, 2017, 25(4): 50-56. DOI: 10.11951/j.issn.1005-0299.20160330
作者姓名:高笑  刘俊成  翟慎秋
作者单位:山东理工大学 材料科学与工程学院,山东 淄博,255049
基金项目:国家自然科学基金资助项目(50972085).
摘    要:移动加热器法被认为是一种切实可行的生长大尺寸、高质量单晶体的方法,它结合了液相外延和区熔提纯的优点.本文阐述了移动加热器法晶体生长的基本原理、优缺点,综述了相关加热方式、晶体生长过程中的质量输运和热交换,并探讨了工艺条件(如重力场、磁场、强迫对流等和晶体生长速率)对移动加热器法生长晶体过程与晶体质量的影响,最后对移动加热器法的发展趋势进行了展望.

关 键 词:晶体生长工艺  移动加热器法  基本原理  加热方式  工艺条件  生长速率
收稿时间:2016-10-03

Review on research progress of crystal growth technique with travelling heater
GAO Xiao,LIU Juncheng and ZHAI Shenqiu. Review on research progress of crystal growth technique with travelling heater[J]. Materials Science and Technology, 2017, 25(4): 50-56. DOI: 10.11951/j.issn.1005-0299.20160330
Authors:GAO Xiao  LIU Juncheng  ZHAI Shenqiu
Affiliation:School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China,School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China and School of Materials Science and Engineering, Shandong University of Technology, Zibo 255049, China
Abstract:Travelling heater method is known as the most effectiveviable technique to grow single crystals with large size and high quality single crystals. It combines the advantages of both liquid phase epitaxy and zone melting purification techniques. This article reviews Tthe fundamentalsbasic principles, advantages and disadvantages of crystal growth techniquecs with travelling heater were reviewed. The heating method, as well as the mass and heat transport duringin the process of crystal growth has been also, was described. The effectinfluences of the processing parameters, including gravitational field, magnetic field and forced convection together withas well as growth rate, on the crystal growth processdure and the crystal ingot quality has beenwere discussed. Finally And the development trend of this technics iswas prospected.
Keywords:crystal growth process   travelling heater method   fundamental   heating method   process conditions   growth rate
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