LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition |
| |
Authors: | Ji?í Stuchlí k,Shinya Honda,Ivo Drbohlav,Tomá &scaron Mates,Antoní n Fejfar,Karel Hru&scaron ka,The Ha Stuchlí kova Jan Ko?ka |
| |
Affiliation: | Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Cukrovarnická 10, 162 53 Praha 6, Czech Republic |
| |
Abstract: | A 15-nm lithium fluoride (LiF) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions. The effect is more pronounced at low substrate temperatures, nucleation density being 10 times higher at ∼ 80 °C. The effect is ascribed to the ionic chemical nature of LiF, the low work function material used in organic electronic devices, and we propose its use for micro patterning crystalline Si regions in otherwise amorphous Si film. |
| |
Keywords: | Amorphous hydrogenated silicon Atomic force microscopy Plasma-enhanced chemical vapour deposition Nucleation Raman scattering Lithium fluoride Thin films |
本文献已被 ScienceDirect 等数据库收录! |
|