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Single-source chemical vapor deposition of clean oriented Al2O3 thin films |
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| Authors: | Xiaofei Duan Nicholas K. Roberts |
| Affiliation: | a School of Chemistry, The University of Melbourne, Parkville, VIC, 3010, Australia b Australian Synchrotron, 800 Blackburn Road, Clayton, VIC, 3168, Australia c School of Natural Sciences, University of Western Sydney, Locked Bag 1797, Penrith South DC 1797, Australia d School of Chemistry, The University of New South Wales, Kensington, NSW, 2052, Australia |
| Abstract: | Clean oriented Al2O3 thin film with a dominant Al2O3 <1 1 3> plane was deposited on Si <1 0 0> substrate at 550 °C, by single-source chemical vapor deposition (CVD) using aluminium(III) diisopropylcarbamate, Al2(O2CNiPr2)6. This process represents a substantial reduction in typical CVD film growth temperatures which are typically > 1000 °C. Through the studies of thermal stability of this precursor, we propose a specific β-elimination decomposition pathway to account for the low temperature of the precursor decomposition at the substrate, and for the lack of carbon impurity byproducts in the resulting alumina films that are characterized using X-ray photoelectron spectroscopy and depth profiling. |
| Keywords: | Aluminium oxide Aluminium diisopropylcarbamate Single-source chemical vapor deposition X-ray photoelectron spectroscopy X-ray diffraction |
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