Analyzing residual stress in bilayer chalcogenide Ge2Se3/SnTe films |
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Authors: | Archana Devasia Feiming Bai Kristy A. Campbell Santosh Kurinec |
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Affiliation: | a Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, New York 14623, USA b Department of Electrical and Computer Engineering, Boise State University, Boise, Idaho 83725, USA |
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Abstract: | Chalcogenide thin film stacks of polycrystalline SnTe and amorphous Ge2Se3 are analyzed for residual stress using X-ray diffraction. The as-deposited film stacks are annealed at different temperatures and the thermal dependence of stress is investigated. Stress evaluations are performed by employing the sin2ψ technique using a 2D area detector system. As-deposited samples are found to be compressively stressed and exhibit increasingly tensile thermal stress with increasing annealing temperature. Onset of crystallization of the bottom Ge2Se3 layer is indicated by a sharp drop in the stress level in the 270 °C-360 °C temperature range, due to volume shrinkage associated with the crystallization. Diffraction patterns of samples annealed at different temperatures indicate compositional changes that are attributed to inter-diffusion of ions between the two layers. The XRD profiles of samples annealed at 360 °C and 450 °C indicate the formation of a Ge2Se3-SnTe solid solution. It is suggested that both, residual stress and temperature dependent compositional changes affect the measured d spacings. |
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Keywords: | Chalcogenides Residual stress Phase-change memory Germanium selenide (Ge2Se3) Tin telluride (SnTe) X-ray diffraction |
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