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Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering
Authors:J. Domaradzki  D. Kaczmarek  E.L. Prociow
Affiliation:Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland
Abstract:In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52 ± 1 °C was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350 nm.
Keywords:Thin film   Magnetron sputtering   Metal-insulator-transition
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