Switching properties of vanadium doped TiO2 thin films prepared by magnetron sputtering |
| |
Authors: | J. Domaradzki D. Kaczmarek E.L. Prociow |
| |
Affiliation: | Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw, Poland |
| |
Abstract: | In the present work thin films of Ti-Me (where Me: V, Nb, Ta) were deposited onto glass substrates by magnetron sputtering of mosaic target in reactive oxygen plasma. The properties of the prepared thin films were studied by X-ray diffraction (XRD), electron dispersive spectroscopy, temperature-dependent electrical and optical transmission spectroscopy measurements. The structural investigations indicate that thin films were XRD-amorphous. Reversible thermoresistance effect, recorded at 52 ± 1 °C was found from electrical measurements. The prepared coatings were well transparent in the visible part of the light spectrum from ca. 350 nm. |
| |
Keywords: | Thin film Magnetron sputtering Metal-insulator-transition |
本文献已被 ScienceDirect 等数据库收录! |
|