Two-dimensional CdS nanosheet-based TFT and LED nanodevices |
| |
Authors: | Ye Yu Yu Bin Gao Zhiwei Meng Hu Zhang Hui Dai Lun Qin Guogang |
| |
Affiliation: | State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871, People's Republic of China. |
| |
Abstract: | Semiconductor nanosheets have several unique applications in electronic and optoelectronic nanodevices. We have successfully synthesized single-crystalline n-type CdS nanosheets via a chemical vapor deposition (CVD) method in a Cd-enriched ambient. The as-synthesized nanosheets are typically 40-100 nm thick, 10-300 μm wide, and up to several millimeters long. Using the nanosheets, we fabricated for the first time (to our knowledge), nano thin-film transistors (nano-TFTs) based on individual CdS nanosheets. A typical unit of such nanosheet TFTs has a high on-off ratio (~1.7 ×10(9)) and peak transconductance (~14.1μS), which to our knowledge are the best values reported so far for semiconductor nano-TFTs. In addition, we fabricated n-CdS nanosheet/p(+)-Si heterojunction light emitting diodes (LEDs) with a top electrode structure. This structure, where the n-type electrode is directly above the junction, has the advantage of a large active region and injection current favorable for high-efficiency electroluminescence (EL) and lasing. Room-temperature spectra of the LEDs consist of only an intense CdS band-edge emission peak (~507.7 nm) with a full width at half-maximum of about 14 nm. |
| |
Keywords: | |
本文献已被 PubMed 等数据库收录! |
|