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| 立方相SiC MEMS器件研究进展 | |
| 引用本文： | 杨挺,孙国胜,吴海雷,闫果果,宁瑾,赵永梅,刘兴防,罗木昌,王雷,赵万顺,曾一平.立方相SiC MEMS器件研究进展[J].微纳电子技术,2010,47(7). |
| 作者姓名： | 杨挺 孙国胜 吴海雷 闫果果 宁瑾 赵永梅 刘兴防 罗木昌 王雷 赵万顺 曾一平 |
| 作者单位： | 1. 中国科学院半导体研究所,半导体材料科学中心,北京,100083 2. 中国科学院半导体研究所,半导体集成技术工程研究中心,北京,100083 3. 中国电子科技集团公司第四十四研究所,重庆,400060 |
| 基金项目： | 国家自然科学基金资助项目 |
| 摘 要： | 主要介绍了近年来国内外出现的有市场推广潜力的立方相碳化硅(3C-SiC)MEMS器件,详细描述了其中一些典型器件的基本结构、加工工艺及初步测试结果,并指出了要想提高器件的可靠性,需要获得低残余应力、低应力梯度的薄膜材料,应当采用合适的刻蚀方法,还需保证金属与碳化硅欧姆接触的稳定性,同时高温引线键合与封装工艺亦不能忽视。随着材料生长和加工成本的不断降低,3C-SiC基MEMS器件将会逐步走向商品化。 |
| 关 键 词： | 立方相碳化硅 MEMS器件 基本结构 加工工艺 测试结果 可靠性 |
Research Progress in Cubic SiC MEMS Devices |
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| Yang Ting,Sun Guosheng,Wu Hailei,Yan Guoguo,Ning Jin,Zhao Yongmei,Liu Xingfang,Luo Muchang,Wang Lei,Zhao Wanshun,Zeng Yiping.Research Progress in Cubic SiC MEMS Devices[J].Micronanoelectronic Technology,2010,47(7). | |
| Authors: | Yang Ting Sun Guosheng Wu Hailei Yan Guoguo Ning Jin Zhao Yongmei Liu Xingfang Luo Muchang Wang Lei Zhao Wanshun Zeng Yiping |
| Affiliation: | Yang Ting1a,Sun Guosheng1a,Wu Hailei1a,Yan Guoguo1a,Ning Jin1b,Zhao Yongmei1b,Liu Xingfang1a,Luo Muchang2,Wang Lei1a,Zhao Wanshun1a,Zeng Yiping1a (1.a.Material Science Center,b.Engineering Reasearch Center for Semiconductor Integrated Technology,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China,2.The 44th Research Institute,CETC,Chongqing 400060,China) |
| Abstract: | Novel cubic silicon carbide (3C-SiC) MEMS devices with larger market potential around the world in recent years are introduced.Basic structures,fabrication processes and preliminary test results of some typical devices are described in detail.Furthermore,it is pointed out that,in order to improve the reliability of devices,the films with low residual stress and low stress gradient must be obtained,the suitable etching method should be adopted,the stability of metal-SiC ohmic contact need be ensured,and the ... |
| Keywords: | cubic silicon carbide MEMS devices basic structures fabrication processes test results reliability |
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