基于最小二乘法的硅二极管I-V 特性建模

为研究硅光电器件的性能,对基于最小二乘法的硅二极管伏安(I-V)特性建模进行研究.分析二极管的I-V特性,采用多项式回归分析算法对实验测量的非线性数据集进行拟合,通过最小二乘法推定系数来构造其矩阵,求取反应硅二极管I-V特性的数学模型参数,通过预测值与实际测量值之间的误差分析来验证算法拟合经验公式的准确性.结果表明,该算法和程序可广泛应用于非线性数据集的多项式回归分析中.

Modeling of Silicon Diode I-V Characteristic Based on Least Square Method

In order to study the performance of silicon photoelectric devices, the I-V characteristic modeling of silicon diode based on least square method is studied. Analyze the I-V characteristics of the diode, polynomial regression analysis algorithm is used to fit the nonlinear data set of experimental measurement. The least square method is used to deduce coefficient and construct the matrix, the mathematical model parameters of the I-V characteristics of the reactive silicon diode were obtained. The accuracy of the fitting empirical formula is verified by the error analysis between the predicted value and the actual measured value. The results show that the algorithm and program can be widely used in polynomial regression analysis of nonlinear data sets.