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Letter: Solution‐processed flexible zinc‐tin oxide thin‐film transistors on ultra‐thin polyimide substrates |
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| Authors: | Peixiong Gao Linfeng Lan Peng Xiao Zhenguo Lin Sheng Sun Yuzhi Li Wei Song Erlong Song Peng Zhang Dongxiang Luo Miao Xu Junbiao Peng |
| Affiliation: | State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China |
| Abstract: | In this letter, solution‐processed flexible zinc‐tin oxide (Z0.35T0.65O1.7) thin‐film transistors with electrochemically oxidized gate insulators (AlOx:Nd) fabricated on ultra‐thin (30 µm) polyimide substrates are presented. The AlOx:Nd insulators exhibited wonderful stability under bending and excellent insulating properties with low leakage current, high dielectric constant, and high breakdown field. The device exhibited a mobility of 3.9 cm2/V · s after annealing at 300 °C. In addition, the flexible device was able to maintain the electricity performance under various degrees of bending, which was attributed to the ultra‐thin polyimide substrate. |
| Keywords: | flexible electronics oxide thin‐film transistors (TFTs) polyimides polymer substrates solution processing thin‐film transistors (TFTs) zinc‐tin oxide |