A 100 MHz to 1 GHz Variable Gain Amplifier in a 8 GHz 1.2 µm BiCMOS Process

A variable gain amplifier with linear gain control has been implemented in a commercially available 8 GHz 1.2 µm BiCMOS process. The gain adjustment linearization is based on forcing a linearly controllable current through diode-connected transistors, thus generating an internal logarithmic control voltage for the Gilbert-type variable gain cell. A Cherry-Hopper type gain stage is used to provide most of the available gain. Thus, the maximum differential gain is 10 dB with over 1 GHz bandwidth and –6.9 dBm input –-1 dB compression power. Gain adjustment range of 50 dB at 200 MHz and 38 dB at 960 MHz is reported. The chip area is 1.15 × 2.15 mm and it consumes 40 mA from a 5 V supply.