离子源对中频反应磁控溅射AlN薄膜结构和性能的影响

采用离子源辅助中频反应磁控溅射技术在单晶硅及硬质合金基体上沉积AlN薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、显微硬度计、薄膜结合强度划痕试验仪等对薄膜结构及性能进行表征,着重研究了离子源对中频反应磁控溅射AlN薄膜结构和性能的影响.结果表明:离子源的辅助沉积有利于AlN相的合成,当离子源功率大于0.7 kW时,AlN沿(100)晶面择优取向明显,当离子源功率为1.3 kW时,所沉积膜层有向非晶化转变的趋势.同时,随着离子源功率的增加,所沉积的AlN薄膜致密度和膜、基结合力均显著提高,而膜层沉积速率和硬度则呈先上升后降低的规律.

Efects of Ion Source on the Structure and Properties of AlN Thin Films Deposited by MF Reactive Magnetron Sputtering

AlN thin films were deposited by MF reactive magnetron sputtering with ion source on silicon wafer and cemented carbide. The structure and properties of AlN thin films were characterized by scanning electron microscope(SEM), Xray diffraction instrument(XRD), microhardness tester and scratch tester. It mainly researches the effects of ion source on the structure and properties of AlN thin films deposited by MF reactive magnetron sputtering. Results show that the AlN phase increases with increasing power of the ion source. The AlN films obviously show (100) orientation when the ion source power is more than 0.7 kW, the AlN thin films have the trend to amorphous transition when the ion source power is 1.3 kW. Additionally, the density and adhesion strength of AlN thin films obviously increase, however, the film deposition rate and hardness first increase and then decrease with increasing ion source power.